Intel manufactures first semiconductor products in 90 nanometers
Intel has succeeded in producing the world's smallest SRAM (Static Random Access Memory) memory cell, which is only 1 square micrometer in size. This SRAM cell was manufactured as part of a fully functional SRAM memory chip, using Intel's 90 nm process technology.
But why is this so important? The construction of SRAM chips is widely used in industry for testing future generation logic manufacturing processes. The smallest possible memory cell size is very important for Intel, since it enables the cost-effective increase in the performance of microprocessors through larger cache memories and more complex circuits. The functional SRAM chips have also shown the successful implementation of all 90 nm process features that are required for microprocessors.
With that Intel has already opened the door to the Pentium 4 successor planned in 2003, the Prescott. This processor should already be manufactured in 90 nm technology. Hyper-Threading Technology, which was recently introduced with the new Xeon MP processors, will also be among the new features of the processor. Here, two independent processors are simulated within one processor and thus they can be used more effectively.
The pictures show a fully functional SRAM memory cell manufactured in 90 nm with a capacity of 52 megabits (6.5 megabytes). The chips contain 330 million transistors on an area of only 109 mm2. They were manufactured in Intel's 300 millimeter D1C development facility in Hillsboro, Oregon, USA, using a combination of advanced 193 nm and 248 nm lithography tools.