Infineon and Nanya cooperate
After successful cooperation talks, Infineon and Nanya have signed an agreement on cooperation on memory chips. Both semiconductor manufacturers want to jointly develop the 0.09 µm and 0.07 µm production technologies for 300 mm wafers from October 2002 onwards.
The development costs will be shared by both companies. A new joint 300mm plant will also be built in Taiwan. In the first expansion stage, production is expected to achieve a monthly capacity of around 20,000 wafers in the second half of 2004, with production of the first 300 mm wafers planned for the end of 2003. The joint venture will be based in Taoyuen/Taiwan near the current production facility in Nanya. The transaction still has to be approved by the antitrust authorities.
The two companies will use the new 0.09 µm and 0.07 µm production technology together at the Infineon site in Dresden and also used in the new joint venture. Production of 300 mm wafers with the new 0.09 µm process will start at the end of 2003 at the joint Taoyuen plant. It is also planned to use the 0.09 µm production technology for 200 mm wafers. By switching to the smaller 0.09 µm and 0.07 µm structures in chip construction, a further boost in productivity can be achieved in the future.
The manufacturing joint venture in Taoyuen will be part of the international network of DRAM production sites from Infineon integrated, which is formed from the production sites in Dresden, Richmond and Virginia. This concept of global networking of the factories guarantees the same high quality standards at all locations worldwide as well as a constant exchange of experiences.