IBM builds 210 GHz transistor
According to American media reports, IBM developers have succeeded in manufacturing silicon-germanium transistors that are said to have a transit frequency of 210 GHz.
The Wall Street Journal even reports that IBM will use this technology to produce the 300 GHz mark still wants to exceed. In the course of the day IBM wants to publish technical details about the new transistors. The area of application of the transistors is said to extend primarily to wireless communication circuits. As early as 1999, IBM was able to present heterobipolar transistors with a transit frequency of 90 GHz. IBM has been researching silicon-germanium components since 1989.